The role of the buildup oscillations on the speed of resonant tunneling diodes

نویسنده

  • Jorge Villavicencio
چکیده

The fastest tunneling response in double barrier resonant structures is investigated by considering explicit analytic solutions of the time dependent Schrödinger equation. For cutoff initial plane waves, we find that the earliest tunneling events consist on the emission of a series of propagating pulses of the probability density governed by the buildup oscillations in the quantum well. We show that the fastest tunneling response comes from the contribution of incident carriers at energies different from resonance, and that its relevant time scale is given by τr = πh̄/ |E − ε|, where ε is the resonance energy and E is the incidence energy. PACS: 73.20.Dx,73.40.Gk Typeset using REVTEX

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Resonant-tunneling diodes with emitter prewells

Related Articles Ultra-thin titanium oxide Appl. Phys. Lett. 101, 083113 (2012) Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices Appl. Phys. Lett. 101, 043508 (2012) Simulation of trap-assisted tunneling effect on characteristics of gallium nitride diodes J. Appl. Phys. 111, 123115 (2012) Tuning of terahertz intrinsic oscillations in asymmetric triple-bar...

متن کامل

Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study

A comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within Non-equilibrium Green's Function formalism. Quantum confinement increases the effective Schottky barrier height (SBH). (100) orientation provides lower effective Schottky barrier height in compa...

متن کامل

Quantitative simulation of a resonant tunneling diode

Related Articles Ultra-thin titanium oxide Appl. Phys. Lett. 101, 083113 (2012) Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices Appl. Phys. Lett. 101, 043508 (2012) Simulation of trap-assisted tunneling effect on characteristics of gallium nitride diodes J. Appl. Phys. 111, 123115 (2012) Tuning of terahertz intrinsic oscillations in asymmetric triple-bar...

متن کامل

Fabrication of Sub-THz Oscillators Using Resonant Tunneling Diodes Integrated with Slot Antennas

We fabricated sub-THz oscillators using resonant tunneling diodes integrated with slot antennas. Oscillations at 90GHz and 136GHz were obtained for the slot antennas with the lengths of 1mm and 800μm. Theoretical calculation shows that the maximum oscillation frequency up to ~1.2THz is expected in this structure with short antenna.

متن کامل

The Effect of Structural Parameters on the Electronic States and Oscillator Strength of a Resonant Tunneling Quantum Well Infrared Photodetector

In this paper a resonant tunnelling quantum well infrared photodetector (RT-QWIP) is discussed. Each period of this photodetector structure comprises of a resonant tunnelling structure (AlAs/AlGaAs/AlAs) nearby a quantum well (AlGaAs/GaAs). In this photodetector, photocurrent is produced when an electron makes a transition from the ground state of the well to an excited state which is coupled t...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2002